2SD192

SKU: 2SD192

2SD192 Transistor Germanium NPN CASE: TO5 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO5
Manufacturer	Toshiba
Vbr CBO	30
Vbr CEO	25
Max. hFE	130
Min hFE	40
Ic Max. (A)	.15
@Ic (test) (A)	.05
Icbo Max. @Vcb Max. (A)	14n
Polarity	NPN
Derate Above 25°C	2.9m
Oper. Temp (°C) Max.	75
@VCE (V)	1.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	24 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.15 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	584731

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