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2SD193
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2SD193

SKU: 2SD193
2SD193 Transistor Germanium NPN CASE: TO5 MAKE: Toshiba
Product specifications
Type Transistor Germanium NPN
Case TO5
Manufacturer Toshiba
Vbr CBO 35
Max. PD (W) 250m
hfe 100
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 75
@Ic (A) 150m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 24 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 584732
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