The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD194
View detailed images (12)

2SD194

SKU: 2SD194
2SD194 Transistor Germanium NPN CASE: TO5 MAKE: Toshiba
Product specifications
Type Transistor Germanium NPN
Case TO5
Manufacturer Toshiba
Vbr CBO 32
Vbr CEO 32
Max. hFE 150
Min hFE 40
Ic Max. (A) .40
@Ic (test) (A) .15
Icbo Max. @Vcb Max. (A) 14n
Polarity NPN
Derate Above 25°C 5.0m
Oper. Temp (°C) Max. 75
@VCE (V) 1.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 32 V
Maximum Collector-Emitter Voltage |Vce| 24 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 125 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 584733
Back