The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD1953
View detailed images (13)

2SD1953

SKU: 2SD1953
2SD1953 Transistor Silicon NPN CASE: TO126 MAKE: Fuji Electric
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • 11 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Datasheet
2SD1953 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Fuji Electric
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 1.0
Min hFE 1.0k
Ic Max. (A) 1.5
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Oper. Temp (°C) Max. 140
@VCE (V) 3.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 20000
SKU 345726
Back