| 2SD1963 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | SOT89 | |
| Manufacturer | Rohm Semiconductor | |
| Vbr CEO | 20 | |
| Max. PD (W) | 2.0 | |
| Max. hFE | 560 | |
| Min hFE | 120 | |
| Ic Max. (A) | 3.0 | |
| @Ic (test) (A) | 500m | |
| Polarity | NPN | |
| @VCE (V) | 2.0 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 0.75 W | |
| Maximum Collector-Base Voltage |Vcb| | 30 V | |
| Maximum Collector Current |Ic max| | 5 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 30 | |
| SKU | 345730 | |