2SD1964

SKU: 2SD1964

2SD1964 Transistor Silicon NPN CASE: SOT186 MAKE: Matsushita Electronics

Datasheet

2SD1964 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT186
Manufacturer	Matsushita Electronics
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	1.3
t(f) Max. (S)	2.0u
Max. hFE	3.2k
Min hFE	800
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Tr Max. (s)	2.0u
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	130 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	345731

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