| Equivalent | 2SD197A | |
| Type | Transistor Silicon NPN | |
| Case | TO36 | |
| Manufacturer | Fujitsu | |
| Vbr CBO | 130 | |
| Vbr CEO | 70 | |
| Max. PD (W) | 125 | |
| Max. hFE | 50 | |
| Min hFE | 10 | |
| Ic Max. (A) | 10 | |
| @Ic (test) (A) | 5.0 | |
| Icbo Max. @Vcb Max. (A) | 20u | |
| Polarity | NPN | |
| R(sat) (Û) | 240m | |
| Derate Above 25°C | 833m | |
| Trans. Freq (Hz) Min. | 1.2M | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 4.0 | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 125 W | |
| Maximum Collector-Base Voltage |Vcb| | 130 V | |
| Maximum Collector-Emitter Voltage |Vce| | 70 V | |
| Maximum Emitter-Base Voltage |Veb| | 12 V | |
| Maximum Collector Current |Ic max| | 10 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 10 | |
| SKU | 540206 | |