2SD2012

SKU: 2SD2012

2SD2012 Transistor Silicon NPN CASE: TO220F MAKE: ST Microelectronics - STM

Price:

£5.75 Inc. VAT (£4.79 Ex. VAT)

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Datasheet

2SD2012 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220F
Manufacturer	ST Microelectronics - STM
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	2.0
Max. hFE	320
Min hFE	100
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Trans. Freq (Hz) Min.	9.0M-
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	9 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	81529

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