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2SD2019
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2SD2019

SKU: 2SD2019
2SD2019 Transistor Silicon NPN CASE: TO126 MAKE: Hitachi
Datasheet
2SD2019 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Hitachi
Polarity NPN
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 25000
SKU 345758
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