| 2SD2025 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO220F | |
| Manufacturer | Rohm Semiconductor | |
| Vbr CEO | 100 | |
| Max. PD (W) | 30 | |
| Max. hFE | 20k | |
| Min hFE | 1.0k | |
| Ic Max. (A) | 8.0 | |
| @Ic (test) (A) | 2.0 | |
| Polarity | NPN | |
| @VCE (test) | 3.0 | |
| Pinout Equivalence Number | 3-15 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 30 W | |
| Maximum Collector-Base Voltage |Vcb| | 120 V | |
| Maximum Collector Current |Ic max| | 8 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 10000 | |
| SKU | 85379 | |