| 2SD2030 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO92 | |
| Manufacturer | Hitachi | |
| Vbr CBO | 160 | |
| Vbr CEO | 160 | |
| Max. PD (W) | 400m | |
| C(ob) (F) | 3.8p | |
| hfe | 30 | |
| Ic Max. (A) | 100m | |
| Icbo Max. @Vcb Max. (A) | 10u | |
| Polarity | NPN | |
| Trans. Freq (Hz) Min. | 140M | |
| @VCE (test) (V) | 5.0 | |
| Oper. Temp (°C) Max. | 150 | |
| @Ic (A) | 1.0m | |
| Pinout Equivalence Number | N/A | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 0.4 W | |
| Maximum Collector-Base Voltage |Vcb| | 160 V | |
| Maximum Collector Current |Ic max| | 0.1 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 120 | |
| SKU | 345762 | |