The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD2096

2SD2096

SKU: 2SD2096
2SD2096 Transistor Silicon NPN CASE: SOT82 MAKE: Rohm Semiconductor
Datasheet
2SD2096 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT82
Manufacturer Rohm Semiconductor
Vbr CEO 60
Max. PD (W) 25
Max. hFE 320
Min hFE 60
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Polarity NPN
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 1.8 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 761010
Back