| 2SD2108 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | SOT186 | |
| Manufacturer | Hitachi | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 25 W | |
| Maximum Collector-Base Voltage |Vcb| | 80 V | |
| Maximum Collector-Emitter Voltage |Vce| | 80 V | |
| Maximum Emitter-Base Voltage |Veb| | 7 V | |
| Maximum Collector Current |Ic max| | 8 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 15000 | |
| SKU | 345799 | |