2SD2112
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2SD2112

SKU: 2SD2112
2SD2112 Transistor Silicon NPN CASE: SOT186 MAKE: Hitachi
Datasheet
2SD2112 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT186
Manufacturer Hitachi
Polarity NPN
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 12000
SKU 345803
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