2SD2118

SKU: 2SD2118

2SD2118 Transistor Silicon NPN CASE: TO252 MAKE: Rohm Semiconductor

Datasheet

2SD2118 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO252
Manufacturer	Rohm Semiconductor
Vbr CEO	20
Max. PD (W)	10
Max. hFE	560
Min hFE	120
Ic Max. (A)	5.0
@Ic (test) (A)	500m
Polarity	NPN
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	30 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	345810

Back