2SD2129
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2SD2129

SKU: 2SD2129
2SD2129 Transistor Silicon NPN CASE: SOT186A MAKE: Toshiba
Datasheet
2SD2129 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT186A
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 7000
SKU 345822
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