2SD2130
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2SD2130

SKU: 2SD2130
2SD2130 Transistor Silicon NPN CASE: SOT32 MAKE: Toshiba
Datasheet
2SD2130 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT32
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 30 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 7000
SKU 345823
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