2SD2150

SKU: 2SD2150

2SD2150 Transistor Silicon NPN CASE: SOT89 MAKE: Rohm Semiconductor

Datasheet

2SD2150 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT89
Manufacturer	Rohm Semiconductor
Vbr CEO	20
Max. PD (W)	2.0
Max. hFE	560
Min hFE	120
Ic Max. (A)	3.0
@Ic (test) (A)	100m
Polarity	NPN
@VCE (V)	2.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	290 MHz
Forward Current Transfer Ratio (hFE), MIN	180
SKU	345836

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