| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT89 |
| Manufacturer |
Rohm Semiconductor |
| Vbr CEO |
31 |
| Max. PD (W) |
2.0 |
| Max. hFE |
270 |
| Min hFE |
56 |
| Ic Max. (A) |
2.0 |
| @Ic (test) (A) |
500m |
| Polarity |
NPN |
| @VCE (V) |
3.0 |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.5 W |
| Maximum Collector-Base Voltage |Vcb| |
27 V |
| Maximum Collector-Emitter Voltage |Vce| |
27 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
2 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Collector Capacitance (Cc) |
25 pF |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
56 |
| SMD Transistor Code |
DLN_DLP_DLQ |
| SKU |
345846 |