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2SD2170
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2SD2170

SKU: 2SD2170
2SD2170 Transistor Silicon NPN Darlington CASE: SOT89 MAKE: Rohm Semiconductor
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Datasheet
2SD2170 Datasheet
Product specifications
Type Transistor Silicon NPN Darlington
Case SOT89
Manufacturer Rohm Semiconductor
Vbr CEO 90
Max. PD (W) 2.0
Max. hFE 10k
Min hFE 1.0k
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Polarity NPN
@VCE (test) 2.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 90 V
Maximum Collector-Emitter Voltage |Vce| 90 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 1000
SMD Transistor Code D_DM
SKU 345848
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