2SD2176

SKU: 2SD2176

2SD2176 Transistor Silicon NPN Darlington + Diode CASE: SOT89 MAKE: Sanyo Semiconductor

Datasheet

2SD2176 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN Darlington + Diode
Case	SOT89
Manufacturer	Sanyo Semiconductor
Vbr CEO	50
Max. PD (W)	1.3
Max. hFE	20.0k
Min hFE	1.0k
Ic Max. (A)	1.2
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	10u
Mat.	Silicon Logic
Polarity	NPN
Derate Above 25°C	10m
@VCE (test)	3.0
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1.3 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	1.2 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	1000
SMD Transistor Code	DQ
SKU	345849

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