2SD2212

SKU: 2SD2212

2SD2212 Transistor Silicon NPN Darlington + Diode CASE: SOT89 MAKE: Rohm Semiconductor

Datasheet

2SD2212 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN Darlington + Diode
Case	SOT89
Manufacturer	Rohm Semiconductor
Vbr CEO	60
Max. PD (W)	2
Max. hFE	10k
Min hFE	1k
Ic Max. (A)	2
@Ic (test) (A)	1
Mat.	Silicon Logic
Polarity	NPN
@VCE (test)	2
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.5 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	25 pF
Transition Frequency (ft):	80 MHz
Forward Current Transfer Ratio (hFE), MIN	1000
SMD Transistor Code	DR
SKU	345875

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