2SD2233

SKU: 2SD2233

2SD2233 Transistor Silicon NPN CASE: SOT186 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT186
Manufacturer	Matsushita Electronics
Vbr CBO	200
Vbr CEO	60
Max. PD (W)	40
Min hFE	20
Ic Max. (A)	4.0
@Ic (test) (A)	4.0
Polarity	NPN
@VCE (V)	5.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	250 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	20 MHz
Forward Current Transfer Ratio (hFE), MIN	4000
SKU	550705

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