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2SD226
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2SD226

SKU: 2SD226
2SD226 Transistor Silicon NPN CASE: TO66 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Matsushita Electronics
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 25
Max. hFE 90-
Min hFE 20
Ic Max. (A) 2.0
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 30u
Polarity NPN
R(sat) (Û) 700m
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 25k
Oper. Temp (°C) Max. 140
@VCE (V) 3.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 395582
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