2SD231

SKU: 2SD231

2SD231 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Fujitsu
Vbr CBO	50
Vbr CEO	40
Max. PD (W)	125
t(f) Max. (S)	5.0u-
Min hFE	25-
Ic Max. (A)	30
@Ic (test) (A)	10
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	3.5u-
R(sat) (Û)	100m
Derate Above 25°C	833m
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	125 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	30 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	10
SKU	760716

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