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2SD2318
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2SD2318

SKU: 2SD2318
2SD2318 Transistor Silicon NPN CASE: TO252 MAKE: Rohm Semiconductor
Datasheet
2SD2318 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO252
Manufacturer Rohm Semiconductor
Vbr CEO 60
Max. PD (W) 15
Max. hFE 1.8k
Min hFE 390
Ic Max. (A) 4.5
@Ic (test) (A) 500m
Polarity NPN
@VCE (V) 4
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 60 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 560
SKU 345931
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