The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD234G
View detailed images (12)

2SD234G

SKU: 2SD234G
2SD234G Transistor Silicon NPN CASE: TO220 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Generic
Vbr CBO 60
Vbr CEO 50
Max. PD (W) 25
Max. hFE 240
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
R(sat) (Û) 400m
Derate Above 25°C 200m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 400 pF
Transition Frequency (ft): 0.75 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 760671
Back