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2SD235G
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2SD235G

SKU: 2SD235G
2SD235G Transistor Silicon NPN CASE: TO220 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Toshiba
Vbr CBO 80
Vbr CEO 40
Max. PD (W) 25
Max. hFE 240
Min hFE 40
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
R(sat) (Û) 1.0
Derate Above 25°C 200m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 500 pF
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 760662
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