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2SD235Y
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2SD235Y

SKU: 2SD235Y
2SD235Y Transistor Silicon NPN CASE: TO220 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Toshiba
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 1.5
Max. hFE 240
Min hFE 120
Ic Max. (A) 3.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
R(sat) (Û) 1.0
Derate Above 25°C 200m
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 400 pF
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 760656
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