2SD246

SKU: 2SD246

2SD246 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	1.5k
Vbr CEO	1.5k
Max. PD (W)	16
t(f) Max. (S)	1.3u
Min hFE	2.0
Ic Max. (A)	4.5
@Ic (test) (A)	4.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
R(sat) (Û)	2.2
Derate Above 25°C	177m
Oper. Temp (°C) Max.	125
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	15 W
Maximum Collector-Base Voltage \|Vcb\|	1500 V
Maximum Collector-Emitter Voltage \|Vce\|	700 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	115 °C
Forward Current Transfer Ratio (hFE), MIN	2
SKU	549823

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