2SD251

SKU: 2SD251

2SD251 Transistor Silicon NPN CASE: TO66 MAKE: Fujitsu

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Fujitsu
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	30
t(f) Max. (S)	3.0u-
Min hFE	100-
Ic Max. (A)	2.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	NPN
Tr Max. (s)	2.5u-
R(sat) (Û)	2.0
Derate Above 25°C	200m
Oper. Temp (°C) Max.	175
@VCE (V)	10
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	540209

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