2SD312

SKU: 2SD312

2SD312 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Price:

£23.99 Inc. VAT (£19.99 Ex. VAT)

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Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	800
Vbr CEO	600
Max. PD (W)	25
Min hFE	25
Ic Max. (A)	1.0
@Ic (test) (A)	600m
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	200m
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	800 V
Maximum Collector-Emitter Voltage \|Vce\|	600 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	395592

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