2SD319

SKU: 2SD319

2SD319 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Matsushita Electronics
Vbr CBO	110
Vbr CEO	80
Max. PD (W)	100
Max. hFE	200
Min hFE	40
Ic Max. (A)	30
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	30u
Polarity	NPN
R(sat) (Û)	400m
Derate Above 25°C	800m
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	1100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	549825

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