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2SD329
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2SD329

SKU: 2SD329
2SD329 Transistor Silicon NPN CASE: TO39 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Fujitsu
Vbr CBO 70
Vbr CEO 200
Max. PD (W) 800m
Derate (Amb) (W/°C) 5.3m
hfe 40
Ic Max. (A) 1.0
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
@VCE (test) (V) 4.0
Oper. Temp (°C) Max. 175
@Ic (A) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 540210
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