2SD341H

SKU: 2SD341H

2SD341H Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CBO	100
Vbr CEO	60
Max. PD (W)	115
Max. hFE	70
Min hFE	20
Ic Max. (A)	15
@Ic (test) (A)	4.0
Icbo Max. @Vcb Max. (A)	700u
Polarity	NPN
R(sat) (Û)	275m
Derate Above 25°C	657m
Trans. Freq (Hz) Min.	800k
Oper. Temp (°C) Max.	175
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	115 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	180 °C
Transition Frequency (ft):	0.8 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	590782

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