2SD35

SKU: 2SD35

2SD35 Transistor Germanium NPN CASE: U8 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	U8
Manufacturer	Matsushita Electronics
Vbr CBO	20
Max. PD (W)	83m
Derate (Amb) (W/°C)	1.6m
hfe	108=
Ic Max. (A)	60m
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	75
@Ic (A)	250u
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.085 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.06 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	0.5 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	760444

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