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2SD351
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2SD351

SKU: 2SD351
2SD351 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 650
Vbr CEO 270
Max. PD (W) 80
Max. hFE 30
Min hFE 6.5
Ic Max. (A) 7.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 5.0m
Polarity NPN
Derate Above 25°C 640m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 650 V
Maximum Collector-Emitter Voltage |Vce| 270 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 7 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 6.5
SKU 549828
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