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2SD357
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2SD357

SKU: 2SD357
2SD357 Transistor Silicon NPN - CASE: TO220 MAKE: Mitsubishi
Price: £11.99
+ VAT 20% for UK purchases
£11.99
Qty
+ VAT 20% for UK purchases
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Datasheet
2SD357 Datasheet
Product specifications
Case TO220
Type Transistor Silicon NPN
Manufacturer Mitsubishi
Vbr CBO 110
Vbr CEO 100
Max. PD (W) 10
Max. hFE 300
Min hFE 55
Ic Max. (A) 800m
@Ic (test) (A) 300m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 80m
Trans. Freq (Hz) Min. 70M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 110 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN 55
SKU 346062
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