The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SD36

2SD36

SKU: 2SD36
2SD36 Transistor Germanium NPN CASE: U8 MAKE: Matsushita Electronics
Product specifications
Type Transistor Germanium NPN
Case U8
Manufacturer Matsushita Electronics
Vbr CBO 20
Max. PD (W) 83m
Derate (Amb) (W/°C) 1.6m
hfe 220=
Ic Max. (A) 60m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 75
@Ic (A) 250u
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.085 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.06 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 75
SKU 760436
Back