2SD363

SKU: 2SD363

2SD363 Transistor Silicon NPN CASE: TO3 MAKE: NEC

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	NEC
Vbr CBO	250
Vbr CEO	200
Max. PD (W)	200
Max. hFE	100
Min hFE	15
Ic Max. (A)	30
@Ic (test) (A)	15
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	300n
R(sat) (Û)	100m
Derate Above 25°C	1.3
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	250 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	30 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	85767

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