2SD367

SKU: 2SD367

2SD367 Transistor Germanium NPN CASE: TO1 MAKE: Matsushita Electronics

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO1
Manufacturer	Matsushita Electronics
Vbr CBO	25
Max. PD (W)	150m
Derate (Amb) (W/°C)	3.0m
hfe	46
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	20u
Polarity	NPN
Trans. Freq (Hz) Min.	30k
@VCE (test) (V)	0.5
Oper. Temp (°C) Max.	100
@Ic (A)	150m
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	85 °C
Forward Current Transfer Ratio (hFE), MIN	46
SKU	115438

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