2SD369

SKU: 2SD369

2SD369 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	80
Vbr CEO	60
Max. PD (W)	100
Max. hFE	300
Min hFE	30
Ic Max. (A)	10
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Tr Max. (s)	3.0u
Derate Above 25°C	800m
Trans. Freq (Hz) Min.	2.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	100 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	10 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	400 pF
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	50
SKU	584734

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