| Equivalent | 2SD376 | |
| Type | Transistor Silicon NPN | |
| Case | TO3 | |
| Manufacturer | NEC | |
| Vbr CBO | 350 | |
| Vbr CEO | 300 | |
| Max. PD (W) | 100 | |
| t(f) Max. (S) | 150n | |
| Max. hFE | 160 | |
| Min hFE | 30 | |
| Ic Max. (A) | 15 | |
| @Ic (test) (A) | 5.0 | |
| Icbo Max. @Vcb Max. (A) | 1.0m | |
| Polarity | NPN | |
| Derate Above 25°C | 670m | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 5.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 100 W | |
| Maximum Collector-Base Voltage |Vcb| | 350 V | |
| Maximum Collector-Emitter Voltage |Vce| | 300 V | |
| Maximum Emitter-Base Voltage |Veb| | 7 V | |
| Maximum Collector Current |Ic max| | 15 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 30 | |
| SKU | 557169 | |