| Weight |
0.01 kg
|
| Equivalent |
2SD380A |
| Type |
Transistor Silicon NPN |
| Case |
TO3 |
| Manufacturer |
Matsushita Electronics |
| Vbr CBO |
1.5k |
| Vbr CEO |
700 |
| Max. PD (W) |
50 |
| t(f) Max. (S) |
900n |
| Max. hFE |
15 |
| Min hFE |
5.0 |
| Ic Max. (A) |
5.0 |
| @Ic (test) (A) |
5.0 |
| Icbo Max. @Vcb Max. (A) |
1.0m |
| Polarity |
NPN |
| Tr Max. (s) |
900n |
| R(sat) (Û) |
2.0 |
| Derate Above 25°C |
476m |
| Oper. Temp (°C) Max. |
135 |
| @VCE (V) |
10 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
50 W |
| Maximum Collector-Base Voltage |Vcb| |
1500 V |
| Maximum Collector-Emitter Voltage |Vce| |
700 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
13 A |
| Max. Operating Junction Temperature (Tj) |
135 °C |
| Collector Capacitance (Cc) |
200 pF |
| Forward Current Transfer Ratio (hFE), MIN |
5 |
| SKU |
82692 |