2SD383
View detailed images (13)

2SD383

SKU: 2SD383
2SD383 Transistor Silicon NPN CASE: TO3 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Hitachi
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 80
Max. hFE 80-
Min hFE 40
Ic Max. (A) 5.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
R(sat) (Û) 4.0
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 100 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 542505
Back