2SD389A

SKU: 2SD389A

2SD389A Transistor Silicon NPN CASE: TO220 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO220
Manufacturer	Mitsubishi
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	25
Max. hFE	160
Min hFE	30
Ic Max. (A)	3.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	30u
Polarity	NPN
R(sat) (Û)	500m
Derate Above 25°C	200m
Trans. Freq (Hz) Min.	25k
Oper. Temp (°C) Max.	140
@VCE (V)	3.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	395602

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