2SD41

SKU: 2SD41

2SD41 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	200
Max. hFE	200
Min hFE	30
Ic Max. (A)	10
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	200u
Polarity	NPN
Derate Above 25°C	1.6
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	200 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.01 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	584250

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