2SD413

SKU: 2SD413

2SD413 Transistor Silicon NPN CASE: TO39 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Fujitsu
Vbr CBO	200
Vbr CEO	200
Max. PD (W)	800m
C(ob) (F)	12p
Derate (Amb) (W/°C)	5.3m
hfe	65
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	5.0u
Polarity	NPN
Trans. Freq (Hz) Min.	25M
@VCE (test) (V)	5.0
Oper. Temp (°C) Max.	175
@Ic (A)	200m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	24 pF
Transition Frequency (ft):	12 MHz
Forward Current Transfer Ratio (hFE), MIN	65
SKU	540211

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