2SD417

SKU: 2SD417

2SD417 Transistor Silicon NPN CASE: TO3 MAKE: Fujitsu

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Fujitsu
Vbr CBO	250
Vbr CEO	200
Max. PD (W)	75
t(f) Max. (S)	600n-
Min hFE	25-
Ic Max. (A)	7.0
@Ic (test) (A)	3.0
Icbo Max. @Vcb Max. (A)	10u
Polarity	NPN
Tr Max. (s)	1.3u-
R(sat) (Û)	400m
Derate Above 25°C	500m
Trans. Freq (Hz) Min.	30M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	75 W
Maximum Collector-Base Voltage \|Vcb\|	250 V
Maximum Collector-Emitter Voltage \|Vce\|	200 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	15 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	540212

Back