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2SD418
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2SD418

SKU: 2SD418
2SD418 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 1.0k
Vbr CEO 500
Max. PD (W) 80
Max. hFE 30
Min hFE 6.5
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 1.5u
Derate Above 25°C 640m
Oper. Temp (°C) Max. 140
@VCE (V) 5.0i
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 1000 V
Maximum Collector-Emitter Voltage |Vce| 500 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 6.5
SKU 549830
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